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| PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 96N15P IXTT 96N15P VDSS ID25 RDS(on) = 150 V = 96 A = 24 m Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 150 150 20 V V V A A A A mJ J V/ns W C C C C TO-3P (IXTQ) TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 96 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 G D S (TAB) TO-268 (IXTT) G G = Gate S = Source S D = Drain TAB = Drain D (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 1.13/10 Nm/lb.in. 5.5 5.0 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C Characteristic Values Min. Typ. Max. 150 2.5 5.0 100 25 250 24 V V nA A A m Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99131C(05/04) (c) 2004 IXYS All rights reserved IXTQ 96N15P IXTT 96N15P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 35 45 3500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 280 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 33 66 18 110 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 59 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W (TO-3P) 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 96 250 1.5 150 2.0 A A V ns C TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXTQ 96N15P IXTT 96N15P Fig. 1. Output Characteristics @ 25C 100 90 80 70 VGS = 10V 9V 200 175 150 VGS = 10V Fig. 2. Extended Output Characteristics @ 25C 9V I D - Amperes I D - Amperes 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 6V 7V 8V 125 100 8V 75 50 25 0 0 2 4 6 7V 6V 8 10 12 14 16 18 20 V D S - Volts Fig. 3. Output Characteristics @ 150C 100 90 80 VGS = 10V 9V 2.8 2.6 2.4 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized I D - Amperes 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 7V 6V 5V 2.5 3 3.5 4 4.5 5 5.5 8V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 96A I D = 48A V D S - Volts -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 80 70 TJ = 175C 60 External Lead Current Limit Fig. 5. RDS(on) Norm alized to 3.8 3.4 0.5 ID25 Value vs. ID R D S ( o n ) - Normalized 3 2.6 2.2 1.8 1.4 1 0.6 0 50 VGS = 15V I D - Amperes 50 40 30 20 10 0 VGS = 10V TJ = 25C I D - Amperes 100 150 200 250 -50 -25 0 TC - Degrees Centigrade 25 50 75 100 125 150 175 (c) 2004 IXYS All rights reserved IXTQ 96N15P IXTT 96N15P Fig. 7. Input Adm ittance 180 160 140 60 50 TJ = -40C 25C 150C Fig. 8. Transconductance g f s - Siemens TJ = 150C 25C -40C 4 5 6 7 8 9 1 0 I D - Amperes 120 100 80 60 40 20 0 40 30 20 10 0 0 25 50 75 100 125 150 175 200 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 300 10 9 250 8 7 VDS = 75V I D = 48A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 200 VG S - Volts TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 6 5 4 3 2 1 0 150 100 50 0 V S D - Volts Fig. 11. Capacitance 10000 f = 1MHz 1000 0 10 20 30 Q G - nanoCoulombs 40 50 60 70 80 90 100 110 Fig. 12. Forw ard-Bias Safe Operating Area Capacitance - picoFarads R DS(on) Limit I D - Amperes C iss 100 25s 100s 1ms 10ms 1000 C oss 10 TJ = 175C DC C rss 100 0 5 10 15 1 TC = 25C V DS - Volts 20 25 30 35 40 1 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXTQ 96N15P IXTT 96N15P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 1.00 R( t h ) J C - C / W 0.10 0.01 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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